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相关论文: Inhomogeneity in doped Mott insulator

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High temperature superconductivity in doped Mott insulators such as the cuprates contradicts the conventional wisdom that electron repulsion is detrimental to superconductivity. Because doped fullerene conductors are also strongly…

强关联电子 · 物理学 2007-08-07 M. Capone , M. Fabrizio , C. Castellani , E. Tosatti

We review several of the normal state properties of the cuprates in an attempt to establish an organizing principle from which pseudogap phenomena, broad spectral features, $T-$linear resistivity, and spectral weight transfer emerge. We…

强关联电子 · 物理学 2007-05-23 Philip Phillips

Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of…

Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…

强关联电子 · 物理学 2007-12-11 M. Aichhorn , E. Arrigoni , M. Potthoff , W. Hanke

We report an x-ray photoemission spectroscopy study of Ca$_2$RuO$_4$ surface-dosed with Cs alkali atoms and C$_{60}$ molecules. Due to its small ionization energy (large electron affinity), deposited Cs atoms (C$_{60}$ molecules) are…

强关联电子 · 物理学 2026-02-18 M. Horio , T. Wada , V. Granata , R. Fittipaldi , A. Vecchione , J. Chang , I. Matsuda

We study the extended Hubbard model away from half-filling on a two-dimensional square lattice using cluster dynamical mean field theory on clusters of size $8$. We show that the model exhibits metallic, compressible charge ordered, and…

强关联电子 · 物理学 2019-04-05 Hanna Terletska , Tianran Chen , Joseph Paki , Emanuel Gull

Two-dimensional higher-order topological insulators can display a number of exotic phenomena such as half-integer charges localized at corners or disclination defects. In this paper, we analyze these phenomena, focusing on the paradigmatic…

强关联电子 · 物理学 2023-01-11 Julian May-Mann , Taylor L. Hughes

The doped Mott insulator in one dimension has been studied based on the phase Hamiltonian with the Umklapp scattering process, in which the charge degree of freedom is described by the quantum sine-Gordon model. The well-known equivalence…

凝聚态物理 · 物理学 2009-10-28 Michiyasu Mori , Hidetoshi Fukuyama

We derive some physical properties of ideal assemblies of identical particles obeying generalized exclusion statistics. We discuss fluctuations, and in this connection point out a fundamental contrast to conventional quantum statistics. We…

凝聚态物理 · 物理学 2008-02-03 Frank Wilczek , Chetan Nayak

We report particle-hole pair excitations in a cuprate insulator in the intermediate regimes of momentum-transfers using high energy inelastic x-ray scattering. The excitation spectra show dispersive features near the Mott edge which shed…

强关联电子 · 物理学 2009-11-07 M. Z. Hasan , E. D. Isaacs , Z-X. Shen , L. L. Miller

Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-Tc cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with…

强关联电子 · 物理学 2009-11-10 K. Tsutsui , T. Tohyama , S. Maekawa

We consider extended Hubbard models with repulsive interactions on a Honeycomb lattice and the transitions from the semi-metal phase at half-filling to Mott insulating phases. In particular, due to the frustrating nature of the…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Raghu , Xiao-Liang Qi , C. Honerkamp , Shou-Cheng Zhang

Recently, we have solved the long-standing problem of connecting the physics of the Mott insulator to the underdoped regime of the t-J model [PRB 82, 014504, 2010]. We have derived a renormalized Hamiltonian valid for small doping (x) which…

超导电性 · 物理学 2010-12-07 Sanjoy K. Sarker , Timothy Lovorn

We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…

强关联电子 · 物理学 2009-11-10 K. Haule , A. Rosch , J. Kroha , P. Wölfle

We study the breakdown of a Mott insulator with the thermodynamic imbalance induced by an applied bias voltage. By analyzing the instabilities of the magnetic susceptibility, we describe a rich non-equilibrium phase diagram, obtained for…

强关联电子 · 物理学 2016-05-04 Pedro Ribeiro , Andrey E. Antipov , Alexey N. Rubtsov

We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also…

介观与纳米尺度物理 · 物理学 2015-02-17 Vladimir A. Sablikov , Aleksei A. Sukhanov

We propose a new form of inhomogeneous phases consisting of out-of-phase staggered flux domains separated by diagonal charged domain walls centered on bonds or on sites. Remarkably, such domain flux phases are spin-rotationally symmetric…

强关联电子 · 物理学 2007-05-23 Marcin Raczkowski , Didier Poilblanc , Raymond Fresard , Andrzej M. Oles

Turning a pristine Mott insulator into a correlated metal by chemical doping is a common procedure in strongly correlated materials physics, e.g. underlying the phenomenology of high-$T_c$ cuprates. The ruthenate bilayer compound…

强关联电子 · 物理学 2020-09-29 Frank Lechermann , Qiang Han , Andrew J. Millis

The moir\'e pattern induced by lattice mismatch in transition-metal dichalcogenide heterobilayers causes the formation of flat bands, where interactions dominate the kinetic energy. At fractional fillings of the flat valence band, the…

强关联电子 · 物理学 2023-12-07 Yuting Tan , Pak Ki Henry Tsang , Vladimir Dobrosavljević , Louk Rademaker

We analyze pseudogap phenomena widely observed in the underdoped cuprates. We assume the existence of a strong d-wave pairing force competing with antiferromagnetic(AFM) fluctuations and the formation of flat and damped dispersion around…

超导电性 · 物理学 2007-05-23 Shigeki Onoda , Masatoshi Imada