电子掺杂与空穴掺杂氧化钙铜酸盐中Mott间隙坍塌的不同路径
超导电性
2017-08-23 v1
摘要
最近对电子掺杂氧化钙铜酸盐Nd_{2-x}Ce_xCuO_4的ARPES测量可解释为均匀掺杂反歧铝磁体模型，其中Mott间隙在接近最优掺杂处坍塌。模式耦合计算确认了均匀掺杂模型的结果，同时阐明了Mott间隙与短程磁有序之间的关系。相同计算发现，空穴掺杂氧化钙铜酸盐应遵循显著不同的掺杂依赖关系，涉及向螺旋相或条纹结构的不稳定性。尽管如此，磁有序（现在与条纹相关）仍在最优掺杂处坍塌。
引用
@article{arxiv.cond-mat/0308361,
title = {Contrasting Pathways to Mott Gap Collapse in Electron and Hole Doped Cuprates},
author = {R. S. Markiewicz},
journal= {arXiv preprint arXiv:cond-mat/0308361},
year = {2017}
}
备注
5 eps figures, revtex. Presented at the ``Workshop on Intrinsic Multiscale Structure and Dynamics in Complex Electronic Oxides'', at the International Center for Theoretical Physics, Trieste, Italy, July 1-4, 2002; to be published, in ``Intrinsic Multiscale Structure and Dynamics in Complex Electronic Oxides'', edited by A.R. Bishop, S.R. Shenoy, and S. Sridhar, World Scientific (2003)