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相关论文: Inhomogeneity in doped Mott insulator

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Because the cuprate superconductors are doped Mott insulators, it would be advantageous to solve even a toy model that exhibits both Mottness and superconductivity. We consider the Hatsugai-Kohmoto model, an exactly solvable system that is…

超导电性 · 物理学 2020-12-08 Philip W. Phillips , Luke Yeo , Edwin W. Huang

We reconsider the holographic model featuring a superconducting dome on the temperature-doping phase diagram with a modified view on the role of the two charges. The first type charge with density $\rho_{A}$ make the Mott insulator, and the…

高能物理 - 理论 · 物理学 2021-07-15 Wenhe Cai , Sang-Jin Sin

Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material…

强关联电子 · 物理学 2009-11-11 Ling Chen , J. K. Freericks

I shall argue that the high Tc problem is the problem of doping into a Mott insulator. Furthermore, the well documented pseudo-gap phenomenon in underdoped cuprates holds the key to understanding this physics. Phase fluctuation alone cannot…

凝聚态物理 · 物理学 2009-11-10 Patrick A. Lee

The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase…

强关联电子 · 物理学 2009-11-07 L. B. Ioffe , A. J. Millis

Recent angle-resolved photoemission spectroscopy (ARPES) for a newly discovered doped one-dimensional (1D) Mott insulator Ba$_{2-x}$Sr$_x$CuO$_{3+\delta}$ proposed the presence of attractive charge interactions between neighboring sites if…

强关联电子 · 物理学 2024-09-06 Takami Tohyama , Hiroki Maeda , Kenji Tsutsui , Shigetoshi Sota , Seiji Yunoki

Layered doped Mott insulators, such as the cuprates, show unusual temperature dependence of the resistivity. Intriguingly, the resistivity perpendicular to the CuO$_2$ planes, $\rho_c(T)$, shows both metallic ($d\rho_c/dT > 0$) and…

强关联电子 · 物理学 2013-01-11 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

A phenomenological model with itinerant bands and local states trapped by the lattice on the Cu-sites, is discussed to describe global features of cuprates. Relative energy positions of localized and itinerant states being tuned…

强关联电子 · 物理学 2007-05-23 Lev P. Gor'kov

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro

We discuss the quantum numbers of domain walls of minimal length induced by doping Mott insulators, carefully distinguishing between holon and hole walls. We define a minimal wall hypothesis that uniquely correlates the observed spatial…

凝聚态物理 · 物理学 2009-10-28 Chetan Nayak , Frank Wilczek

The possible modification of quantized conductance of one-dimensional doped Mott insulator, where the Umklapp scattering plays an important role, is studied based on the method by Maslov-Stone and Ponomarenko. At T=0 and away from…

凝聚态物理 · 物理学 2009-10-30 Michiyasu Mori , Masao Ogata , Hidetoshi Fukuyama

We theoretically investigate twisted structures where each layer is composed of a strongly correlated material. In particular, we study a twisted t-J model of cuprate multilayers within the slave-boson mean field theory. This treatment…

超导电性 · 物理学 2022-05-18 Xue-Yang Song , Ya-Hui Zhang , Ashvin Vishwanath

We investigate the connection between doping-induced in-gap states and underlying spin excitations in Mott insulators by employing cluster perturbation theory on one-dimensional (1D) and quasi-1D Kitaev-Hubbard models. By manipulating…

强关联电子 · 物理学 2026-05-13 Si-Qi Hou , Shun-Li Yu , Zhao-Yang Dong , Jian-Xin Li

Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…

强关联电子 · 物理学 2019-02-05 F. Massee , Y. K. Huang , M. S. Golden , M. Aprili

Metallic systems with delocalized valence electrons host collective charge density oscillations known as plasmons. On the other hand, conventional insulators do not have free electrons and the low energy charge degrees of freedom are pinned…

We study a two-dimensional single band Hubbard Hamiltonian with antisymmetric spin-orbit coupling. We argue that this is the minimal model to understand the electronic properties of locally non-centrosymmetric transition-metal (TM) oxides…

强关联电子 · 物理学 2021-04-30 Mehdi Biderang , Alireza Akbari , Jesko Sirker

We improve a previous theory of doped Mott insulators with duality between pairing and magnetism by a further duality transform. As the result we obtained a quantum Ginzburg-Landau theory describing the Cooper pair condensate and the dual…

超导电性 · 物理学 2009-11-10 Qiang-Hua Wang

An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…

强关联电子 · 物理学 2012-08-02 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the…

强关联电子 · 物理学 2008-12-11 Y. W. Li , D. Qian , L. Wray , D. Hsieh , Y. Kaga , T. Sasagawa , H. Takagi , R. S. Markiewicz , A. Bansil , H. Eisaki , S. Uchida , M. Z. Hasan