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相关论文: Inhomogeneity in doped Mott insulator

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While both the hole and electron doped cuprates can exhibit $d_{x^2-y^2}$-wave superconductivity, the local distribution of the doped carriers is known to be significantly different with the doped holes going primarily on the O sites while…

强关联电子 · 物理学 2015-11-11 Steven R. White , D. J. Scalapino

Several non-cuprates layered transition-metal oxides exhibit clear evidence for stripe ordering of charges and magnetic moments. Therefore, stripe order should be considered as the typical consequence of doping a Mott insulator, but only in…

强关联电子 · 物理学 2015-06-03 Holger Ulbrich , Markus Braden

High temperature superconductivity was achieved by introducing holes in a parent compound consisting of copper oxide layers separated by spacer layers. It is possible to dope some of the parent compounds with electrons, and their physical…

强关联电子 · 物理学 2015-05-19 Cedric Weber , Kristjan Haule , Gabriel Kotliar

An understanding of the anomalous charge dynamics in the high-Tc cuprates is obtained based on a model study of doped Mott insulators. The high-temperature optical conductivity is found to generally have a two-component structure: a Drude…

强关联电子 · 物理学 2007-09-16 Zheng-Cheng Gu , Zheng-Yu Weng

The issues of single particle coherence and its interplay with singlet pairing are studied within the slave boson gauge theory of a doped Mott insulator. Prior work by one of us (T. Senthil, arXiv:0804.1555) showed that the coherence scale…

强关联电子 · 物理学 2013-05-29 T. Senthil , P. A. Lee

Within the framework of the fermion-spin theory, the charge transport in the doped Mott insulators on a honeycomb lattice is studied by taking into account the pseudogap effect. It is shown that the conductivity spectrum in the low-doped…

超导电性 · 物理学 2016-05-04 Xixiao Ma , Yu Lan , Ling Qin , Shiping Feng

High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved…

Based on the Hubbard model description of the doped Mott insulator, we prove that there must exist a spinless collective excitation of charge $2e$ and of energy $U-2\mu$ peaked at momentum $(\pi/a,\pi/a)$ in the non-superconducting state…

强关联电子 · 物理学 2007-05-23 W. Vincent Liu

Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…

超导电性 · 物理学 2019-01-31 R. Nourafkan , M. Côté , A. - M. S. Tremblay

We analyze the recent vortex core spectroscopy experiments in cuprate superconductor and discuss what can be learned from them about the nature of the ground state in these compounds. We argue that the data are inconsistent with the…

强关联电子 · 物理学 2007-05-23 M. Franz , Z. Tesanovic

The intrinsic instability of underdoped copper oxides towards inhomogeneous states is one of the central puzzles of the physics of correlated materials. The influence of the Mott physics on the doping-temperature phase diagram of copper…

An intuitive interpretation of the relationship between the dispersion relation of the single-particle excitation in a metal and that of the spin excitation in a Mott insulator is presented, based on the results for the one- and…

强关联电子 · 物理学 2014-07-14 Masanori Kohno

We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…

强关联电子 · 物理学 2013-04-30 Ru Chen , SungBin Lee , Leon Balents

We present a class of holographic models that behave effectively as prototypes of Mott insulators, materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field…

高能物理 - 理论 · 物理学 2017-02-01 Matteo Baggioli , Oriol Pujolas

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

Inspired by recent experimental findings, we investigate various scenarios of the doped Hubbard model with impurity potentials. We calculate the lattice Green's function in a finite-size cluster and then map it to the continuum real space,…

强关联电子 · 物理学 2025-09-12 Ning Xia , Yuchen Guo , Shuo Yang

Many emergent phenomena appear in doped Mott insulators near the insulator-to-metal transition. In high-temperature cuprate superconductors, superconductivity arises when antiferromagnetic (AFM) order is gradually suppressed by carrier…

Charge dynamics in a dimer Mott insulating system, where a non-polar dimer-Mott (DM) phase and a polar charge-ordered (CO) phase compete with each other, are studied. In particular, collective charge excitations are analyzed in the three…

强关联电子 · 物理学 2015-06-11 Makoto Naka , Sumio Ishihara

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

强关联电子 · 物理学 2020-06-24 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder.…