相关论文: An Advanced Epitaxial Strategy Enabling Vertical G…

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the…

Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the…

With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene…

We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures…

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and…

The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…

$Al_xGa_{1-x}N$ is a critical ultra-wide bandgap material for optoelectronics, but the deposition of thick, high quality epitaxial layers has been hindered by a lack of lattice-matched substrates. Here we identify the (111) face of…

Several ten $\mu$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam…

This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…

We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate…

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of…

We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical…

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V…

Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($\epsilon_r$) values relative to AlN. $\epsilon_r$ values of ~17 to 21 for Sc contents of…

To sustainably support the ongoing energetic transition, we need functional metal oxides capable of converting energy, and produce storage, and sensing devices. However, these materials suffer from a high economic cost of manufacturing, and…

We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication…

Non-conventional epitaxial techniques, such as van der Waals epitaxy (vdWE) and remote epitaxy, have attracted substantial attention in the semiconductor research community for their capability to repeatedly produce high-quality…

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with…