垂直GaN器件：工艺与可靠性
应用物理
2021-10-25 v2
摘要
本文综述了高性能垂直GaN晶体管与二极管在工艺与可靠性方面的近期进展与关键挑战，重点关注200 mm CMOS兼容技术。我们特别展示了使用200 mm直径热膨胀系数（CTE）匹配衬底用于垂直功率晶体管的潜力，以及用于器件鲁棒性的栅模块优化。还介绍了一种基于硅上氮化镓（GaN-on-Silicon）合并外延的替代技术路径，其可实现极低位错密度的厚漂移层。
引用
@article{arxiv.2107.02469,
title = {Vertical GaN Devices: Process and Reliability},
author = {Shuzhen You and Karen Geens and Matteo Borga and Hu Liang and Herwig Hahn and Dirk Fahle and Michael Heuken and Kalparupa Mukherjee and Carlo De Santi and Matteo Meneghini and Enrico Zanoni and Martin Berg and Peter Ramvall and Ashutosh Kumar and Mikael T. Björk and B. Jonas Ohlsson and Stefaan Decoutere},
journal= {arXiv preprint arXiv:2107.02469},
year = {2021}
}
备注
["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][ECSEL Joint Undertaking (JU)][UltimateGaN][grant agreement No 826392]