This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silicon-based electronics. This enthusiasm was spurred by high carbon nanotube carrier mobilities. However, nanotube production, placement, and control are all serious issues. Graphene, a thin sheet of graphitic carbon, can overcome some of these problems and therefore is a promising new electronic material. Although graphene devices have been built before, in this work we provide the first demonstration and systematic evaluation of arrays of a large number of transistors entirely produced using standard microelectronics methods. Graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/Vs and, Ion/Ioff ratios of up to 7, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micron-scale devices have negligible band gaps and therefore large leakage currents.
@article{arxiv.0801.2744,
title = {Epitaxial graphene transistors on SiC substrates},
author = {Jakub Kedzierski and Pei-Lan Hsu and Paul Healey and Peter Wyatt and Craig Keast and Mike Sprinkle and Claire Berger and Walt de Heer},
journal= {arXiv preprint arXiv:0801.2744},
year = {2009}
}