The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around 450−500∘C. From the chemical reaction between SiC and thin films of Fe or Ru, sp3 carbon is liberated from the SiC crystal and converted to sp2 carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.
@article{arxiv.2011.13976,
title = {Low Temperature Growth of Graphene on Semiconductor},
author = {Håkon I. Røst and Rajesh K. Chellappan and Frode S. Strand and Antonija Grubišić-Čabo and Benjamen P. Reed and Mauricio J. Prieto and Liviu C. Tǎnase and Lucas de Souza Caldas and Thipusa Wongpinij and Chanan Euaruksakul and Thomas Schmidt and Anton Tadich and Bruce C. C. Cowie and Zheshen Li and Simon P. Cooil and Justin W. Wells},
journal= {arXiv preprint arXiv:2011.13976},
year = {2021}
}