An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.
@article{arxiv.0907.5031,
title = {Epitaxial Graphene Growth on SiC Wafers},
author = {D. Kurt Gaskill and Glenn G. Jernigan and Paul M. Campbell and Joseph L. Tedesco and James C. Culbertson and Brenda L. VanMil and Rachael L. Myers-Ward and Charles R. Eddy, and Jeong Moon and D. Curtis and M. Hu and D. Wong and C. McGuire and Joshua A. Robinson and Mark A. Fanton and Joseph P. Stitt and Thomas Stitt and David Snyder and Xiaojun Weng and Eric Frantz},
journal= {arXiv preprint arXiv:0907.5031},
year = {2012}
}
Comments
215th Meeting of the Electrochemical Society, 8 pages, 8 figures