Selective epitaxial growth of graphene on SiC

N. Camara; G. Rius; J. -R. Huntzinger; A. Tiberj; N. Mestres; P. Godignon; J. Camassel

doi:10.1063/1.2988645

Selective epitaxial growth of graphene on SiC

Materials Science 2009-11-13 v2

Authors: N. Camara , G. Rius , J. -R. Huntzinger , A. Tiberj , N. Mestres , P. Godignon , J. Camassel

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Abstract

We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ~1582 cm-1 in the AlN-free areas is used to validate the concept, it gives absolute evidence of the selective FLG growth.

Keywords

epitaxial graphene semiconductor nanowire growth silicon physics

Cite

@article{arxiv.0806.4056,
  title  = {Selective epitaxial growth of graphene on SiC},
  author = {N. Camara and G. Rius and J. -R. Huntzinger and A. Tiberj and N. Mestres and P. Godignon and J. Camassel},
  journal= {arXiv preprint arXiv:0806.4056},
  year   = {2009}
}

Comments

comments: 3 pages, reference 3 replaced

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