In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require prohibitive lithography - and exhibits a wider gap than other alternative options, such as bilayer graphene. Here we propose a model and assess the achievable performance of a nanoscale FET based on epitaxial graphene on SiC, conducting an exploration of the design parameter space. We show that the current can be modulated by 4 orders of magnitude; for digital applications an Ion /Ioff ratio of 50 and a subthreshold slope of 145 mV/decade can be obtained with a supply voltage of 0.25 V. This represents a significant progress towards solid-state integration of graphene electronics, but not yet sufficient for digital applications.
@article{arxiv.0909.4678,
title = {Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC},
author = {Martina Cheli and Paolo Michetti and Giuseppe Iannaccone},
journal= {arXiv preprint arXiv:0909.4678},
year = {2015}
}