In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.
@article{arxiv.1105.6332,
title = {High-Transconductance Graphene Solution-Gated Field Effect Transistors},
author = {Lucas H. Hess and Moritz V. Hauf and Max Seifert and Florian Speck and Thomas Seyller and Martin Stutzmann and Ian D. Sharp and Jose A. Garrido},
journal= {arXiv preprint arXiv:1105.6332},
year = {2011}
}
Comments
The following article has been submitted to Applied Physics Letters. After it is published, it will be found at apl.aip.org