A Graphene-based Hot Electron Transistor

Sam Vaziri; Grzegorz Lupina; Christoph Henkel; Anderson D. Smith; Mikael Östling; Jarek Dabrowski; Gunther Lippert; Wolfgang Mehr; Max C. Lemme

doi:10.1016/j.sse.2013.02.008

A Graphene-based Hot Electron Transistor

Mesoscale and Nanoscale Physics 2014-09-10 v2 Materials Science

Authors: Sam Vaziri , Grzegorz Lupina , Christoph Henkel , Anderson D. Smith , Mikael Östling , Jarek Dabrowski , Gunther Lippert , Wolfgang Mehr , Max C. Lemme

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Abstract

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.

Keywords

field-effect transistors graphene

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@article{arxiv.1211.2949,
  title  = {A Graphene-based Hot Electron Transistor},
  author = {Sam Vaziri and Grzegorz Lupina and Christoph Henkel and Anderson D. Smith and Mikael Östling and Jarek Dabrowski and Gunther Lippert and Wolfgang Mehr and Max C. Lemme},
  journal= {arXiv preprint arXiv:1211.2949},
  year   = {2014}
}

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18 pages, 6 figures

A Graphene-based Hot Electron Transistor

Abstract

Keywords

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