English

Vertical Graphene Base Transistor

Mesoscale and Nanoscale Physics 2012-04-24 v2 Materials Science
Authors: Wolfgang Mehr , J. Christoph Scheytt , Jarek Dabrowski , Gunther Lippert , Ya-Hong Xie , Max C. Lemme , Mikael Ostling , Grzegorz Lupina
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Abstract

We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.

Keywords

field-effect transistors

Cite

@article{arxiv.1112.4520,
  title  = {Vertical Graphene Base Transistor},
  author = {Wolfgang Mehr and J. Christoph Scheytt and Jarek Dabrowski and Gunther Lippert and Ya-Hong Xie and Max C. Lemme and Mikael Ostling and Grzegorz Lupina},
  journal= {arXiv preprint arXiv:1112.4520},
  year   = {2012}
}

Comments

9 pages, 3 figures; IEEE Electron Device Letters, Vol.33, Issue 5, (2012)

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