We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions simultaneously as a top gate, floating gate (FG) reservoir, and active reset contact. This architecture forms an ultrathin van der Waals heterostructure with strong capacitive coupling to the back-gate, confirmed by a dynamic model, enabling a tunable and wide memory window that scales with back-gate voltage and is further enhanced by reducing hBN thickness or increasing FG area. Our devices demonstrate reversible, high-efficiency charge programming, robust non-volatile behavior across 10 to 300 K and a wide range of operation speeds, and endurance beyond 9800 cycles. Importantly, a grounded top electrode provides on-demand charge erasure, offering functionality that is absent in standard FG designs. These results position hBN/graphene-based GFETs as a compact, energy-efficient platform for next-generation 2D flash memory, with implications for multilevel memory schemes and cryogenic electronics.
@article{arxiv.2507.07897,
title = {Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming},
author = {Gabriel L. Rodrigues and Ana B. Yoshida and Guilherme S. Selmi and Nickolas T. K. B de Jesus and Igor Ricardo and Kenji Watanabe and Takashi Taniguchi and Rafael F. de Oliveira and Victor Lopez-Richard and Alisson R. Cadore},
journal= {arXiv preprint arXiv:2507.07897},
year = {2025}
}