Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices based on two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize digital electronics and multifunctional memory applications. Direct bandgap multilayer ReS2 satisfies various requirements as a channel material for electronic devices as well as being a strong light-absorbing layer, which makes it possible to realize light-assisted optoelectronic applications. The non-volatile memory operation with a high ON/OFF current ratio, a large memory window, good endurance (> 1000 cycles) and stable retention (> 104 s) have been observed. We demonstrate successive program and erase states using 10 millisecond gate pulses of +10 V and -10 V, respectively. Laser pulses along with electrostatic gate pulses provide multi-bit level memory access via opto-electrostatic coupling. The devices exhibit the dual functionality of a conventional electronic memory and can store laser-pulse excited signal information for future all-optical logic and quantum information processing.
@article{arxiv.2009.00190,
title = {Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures},
author = {Bablu Mukherjee and Amir Zulkefli and Kenji Watanabe and Takashi Taniguchi and Yutaka Wakayama and Shu Nakaharai},
journal= {arXiv preprint arXiv:2009.00190},
year = {2020}
}