We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices with two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h-BN/graphene exhibit light tuneable rectifying behaviours with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS-type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.
@article{arxiv.2012.03219,
title = {ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory},
author = {Bablu Mukherjee and Ryoma Hayakawa and Kenji Watanabe and Takashi Taniguchi and Shu Nakaharai and Yutaka Wakayama},
journal= {arXiv preprint arXiv:2012.03219},
year = {2020}
}