Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typical hundreds of micro- or even milli- second write time remains a few orders of magnitude longer than their volatile counterparts. We have demonstrated nonvolatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, and achieved ultrahigh-speed programming/erasing operations verging on an ultimate theoretical limit of nanoseconds with extinction ratio up to 10^10. This extraordinary performance has allowed new device capabilities such as multi-bit storage, thus opening up unforeseen applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale-up.
@article{arxiv.2104.11445,
title = {Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices},
author = {Liangmei Wu and AiWei Wang and Jinan Shi and Jiahao Yan and Zhang Zhou and Ce Bian and Jiajun Ma and Ruisong Ma and Hongtao Liu and Jiancui Chen and Yuan Huang and Wu Zhou and Lihong Bao and Min Ouyang and Stephen J. Pennycook and Sokrates T. Pantelides and Hong-Jun Gao},
journal= {arXiv preprint arXiv:2104.11445},
year = {2021}
}
Comments
Preprint version, to be published in Nature Nanotechnology (Submitted on August 16th, 2020)