Recent experiments on layered {\alpha}-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders {\alpha}-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material based electronics with nonvolatile functionality. In this letter, we demonstrate non-volatile memory effect in a hybrid 2D ferroelectric field effect transistor (FeFET) made of ultrathin {\alpha}-In2Se3 and graphene. The resistance of graphene channel in the FeFET is tunable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric {\alpha}-In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top-gate ferroelectric. The 2D FeFET can be randomly re-written over more than 105 cycles without losing the non-volatility. Our approach demonstrates a protype of re-writable non-volatile memory with ferroelectricity in van de Waals 2D materials.
@article{arxiv.1810.05328,
title = {Non-volatile ferroelectric memory effect in ultrathin {\alpha}-In2Se3},
author = {Siyuan Wan and Yue Li and Wei Li and Xiaoyu Mao and Chen Wang and Jiyu Dong and Anmin Nie and Jianyong Xiang and Zhongyuan Liu and Wenguang Zhu and Hualing Zeng},
journal= {arXiv preprint arXiv:1810.05328},
year = {2018}
}