We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the ferroelectric layer. The HZO/beta-Ga2O3 Fe-FinFETs have wider counterclockwise hysteresis loops in the transfer characteristics than that of conventional planar FET, achieving record-high memory window (MW) of 13.9 V in a single HZO layer. When normalized to the actual channel width, FinFETs show an improved ION/IOFF ratio of 2.3x10^7 and a subthreshold swing value of 110 mV/dec. The enhanced characteristics are attributed to the low-interface state density (Dit), showing good interface properties between the beta-Ga2O3 and HZO layer. The enhanced polarization due to larger electric fields across the entire ferroelectric layer in FinFETs is validated using Sentaurus TCAD. After 5x10^6 program/erase (PGM/ERS) cycles, the MW was maintained at 9.2 V, and the retention time was measured up to 3x10^4 s with low degradation. Therefore, the ultrawide bandgap (UWBG) Fe-FinFET was shown to be one of the promising candidates for high-density non-volatile memory devices.
@article{arxiv.2407.18187,
title = {First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window},
author = {Seohyeon Park and Jaewook Yoo and Hyeojun Song and Hongseung Lee and Seongbin Lim and Soyeon Kim and Minah Park and Bongjoong Kim and Keun Heo and Peide D. Ye and Hagyoul Bae},
journal= {arXiv preprint arXiv:2407.18187},
year = {2024}
}