High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing

Chandan Samanta; Elia Palmese; Ziyu Ouyang; Tuofu Zhama; Robinson Pino; Yuping Zeng

High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing

Applied Physics 2026-05-21 v1

Authors: Chandan Samanta , Elia Palmese , Ziyu Ouyang , Tuofu Zhama , Robinson Pino , Yuping Zeng

Abstract

TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate topologies by varying the thickness of the ferroelectric gate stack. Different device architectures are studied by varying the source drain length (LSD) and gate length (LG). The devices have high on/off ratios up to 10^7 with low leakage off currents <10^-12 A. Repeated cycle testing shows high reliability and a stable memory window. The devices have large memory windows ranging from 3 to 8 V.

Keywords

field-effect transistors neuromorphic computing

Cite

@article{arxiv.2605.20406,
  title  = {High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing},
  author = {Chandan Samanta and Elia Palmese and Ziyu Ouyang and Tuofu Zhama and Robinson Pino and Yuping Zeng},
  journal= {arXiv preprint arXiv:2605.20406},
  year   = {2026}
}

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This work has been submitted to the IEEE for possible publication

High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing

Abstract

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