Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
@article{arxiv.2201.02153,
title = {Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs},
author = {Kwan-Ho Kim and Seyong Oh and Merrilyn Mercy Adzo Fiagbenu and Jeffrey Zheng and Pariasadat Musavigharavi and Pawan Kumar and Nicholas Trainor and Areej Aljarb and Yi Wan and Hyong Min Kim and Keshava Katti and Zichen Tang and Vincent C. Tung and Joan Redwing and Eric A. Stach and Roy H. Olsson and Deep Jariwala},
journal= {arXiv preprint arXiv:2201.02153},
year = {2022}
}