Steep-slope β-Ga2O3 nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate voltage sweeps with a minimum value of 34.3 mV/dec at reverse gate voltage sweep and 53.1 mV/dec at forward gate voltage sweep at VDS=0.5 V. Enhancement-mode operation with threshold voltage ~0.4 V is achieved by tuning the thickness of β-Ga2O3 membrane. Low hysteresis of less than 0.1 V is obtained. The steep-slope, low hysteresis and enhancement-mode β-Ga2O3 NC-FETs are promising as nFET candidate for future wide bandgap CMOS logic applications.
@article{arxiv.1711.00824,
title = {$\beta$-Ga$_2$O$_3$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications},
author = {Mengwei Si and Lingming Yang and Hong Zhou and Peide D. Ye},
journal= {arXiv preprint arXiv:1711.00824},
year = {2017}
}