In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics.
@article{arxiv.1108.2021,
title = {BN/Graphene/BN Transistors for RF Applications},
author = {Han Wang and Thiti Taychatanapat and Allen Hsu and Kenji Watanabe and Takashi Taniguchi and Pablo Jarillo-Herrero and Tomas Palacios},
journal= {arXiv preprint arXiv:1108.2021},
year = {2011}
}
Comments
3 pages, 5 figures, accepted for publication in IEEE Electron Device Letters