Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO2 have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT), we demonstrate ultra-low voltage operation of graphene field effect transistors within ±1 V with maximum doping exceeding 1013cm−2 and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.
@article{arxiv.1101.1347,
title = {Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics},
author = {Yi Zheng and Guang-Xin Ni and Sukang Bae and Chun-Xiao Cong and Orhan Kahya and Chee-Tat Toh and Hye Ri Kim and Danho Im and Ting Yu and Jong Hyun Ahn and Byung Hee Hong and Barbaros Ozyilmaz},
journal= {arXiv preprint arXiv:1101.1347},
year = {2011}
}