We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
@article{arxiv.0910.4783,
title = {Wafer-scale synthesis and transfer of graphene films},
author = {Youngbin Lee and Sukang Bae and Houk Jang and Sukjae Jang and Shou-En Zhu and Sung Hyun Sim and Young Il Song and Byung Hee Hong and Jong-Hyun Ahn},
journal= {arXiv preprint arXiv:0910.4783},
year = {2010}
}