相关论文: Charge transport systems with Fermi-Dirac statisti…
A system of drift-diffusion equations for the electron, hole, and oxygene vacancy densities in a semiconductor, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet-Neumann…
A system of degenerate drift-diffusion equations for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a three-dimensional bounded domain with mixed…
The existence of global weak solutions to a partial-differential-algebraic system is proved. The system consists of the drift-diffusion equations for the electron, hole, and oxide vacancy densities in a memristor device, the Poisson…
We establish a novel uniqueness result for an instationary drift-diffusion model for perovskite solar cells. This model for vacancy-assisted charge transport uses Fermi--Dirac statistics for electrons and holes and Blakemore statistics for…
In this paper, we consider a drift-diffusion charge transport model for perovskite solar cells, where electrons and holes may diffuse linearly (Boltzmann approximation) or nonlinearly (e.g. due to Fermi-Dirac statistics). To incorporate…
Dirac's method for constraints is used for solving the problem of exclusion of double occupancy for Correlated Electrons. The constraints are enforced by the pair operator $Q(\vec{x})=\psi_{\downarrow}(\vec{x})\psi_{\uparrow}(\vec{x})$…
We consider charge transport in nanopores where the dielectric constant inside the nanopore is much greater than in the surrounding material, so that the flux of the electric fields due to the charges is almost entirely confined to the…
Fermi-Dirac statistics has been utilized by introducing the average ionization energy ($E_I$) as an additional anomalous energy gap in order to derive the two-dimensional concentration of charge carriers and the phenomenological resistivity…
A modified Poisson-Nernst-Planck system in a bounded domain with mixed Dirichlet-Neumann boundary conditions is analyzed. It describes the concentrations of ions immersed in a polar solvent and the correlated electric potential due to the…
We prove existence of global weak solutions for the Nernst-Planck-Poisson problem which describes the evolution of concentrations of charged species $X_1, ..., X_P$ subject to Fickian diffusion and chemical reactions in the presence of an…
Transport mechanism in the normal state of high-$T_c$ superconductors is described using the well known Fermi-Dirac statistics in which an additional restrictive constraint is introduced so as to capture the variation of resistivity with…
A system of drift-diffusion equations with electric field under Dirichlet boundary conditions is analyzed. The system of strongly coupled parabolic equations for particle density and spin density vector describes the spin-polarized…
We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric…
While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with…
A stochastic approach for charge transport in diodes is developed in consistency with the laws of electricity, thermodynamics, and microreversibility. In this approach, the electron and hole densities are ruled by diffusion-reaction…
A simplified transient energy-transport system for semiconductors subject to mixed Dirichlet-Neumann boundary conditions is analyzed. The model is formally derived from the non-isothermal hydrodynamic equations in a particular vanishing…
In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…
Dirac semi-metals show a linear electronic dispersion in three dimension described by two copies of the Weyl equation, a theoretical description of massless relativistic fermions. At the surface of a crystal, the breakdown of fermion…
The large-time asymptotics of the density matrix solving a drift-diffusion-Poisson model for the spin-polarized electron transport in semiconductors is proved. The equations are analyzed in a bounded domain with initial and Dirichlet…
In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D) materials have demonstrated promising potential for…