相关论文: Low-Frequency Electronic Noise in the Aluminum Gal…

We study theoretically nonequilibrium noise in the fractional quantum Hall regime for an Aharonov Bohm ring which has a third contact in the middle of the ring. We show that as a consequence of their fractional statistics the tunneling of a…

In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…

The frequency flicker of an oscillator, which appears as a 1/f^3 line in the phase noise spectral density, and as a floor on the Allan variance plot, originates from two basic phenomena, namely: (1) the 1/f phase noise turned into 1/f…

Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer…

Spin-diodes are usually resonant in nature (GHz frequency) and tuneable by magnetic field and bias current with performances, in terms of sensitivity and minimum detectable power, overcoming the semiconductor counterpart, i.e. Schottky…

1/f noise in current biased La0.82Ca0.18MnO3 crystals has been investigated. The temperature dependence of the noise follows the resistivity changes with temperature suggesting that resistivity fluctuations constitute a fixed fraction of…

The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any…

Laser power fluctuations can significantly reduce the device performances in various applications. High frequency fluctuations impact the signal-to-noise ratio, while slow variations can reduce the device repeatability or accuracy. Here we…

We directly image Tkachenko waves in a vortex lattice in a dilute-gas Bose-Einstein condensate. The low (sub-Hz) resonant frequencies are a consequence of the small but nonvanishing elastic shear modulus of the vortex-filled superfluid. The…

The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using BEEM over a period of 21 days to observe changes in the interface electrostatics. Initially the average spectrum is fit to a Schottky barrier height of 0.71 eV…

Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for…

The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…

The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of monolayer…

The Schottky barrier height (SBH) is mapped with nanoscale resolution at pure Au/Si(001) and mixed Au/Ag/Si(001) interfaces utilizing ballistic electron emission microscopy (BEEM) by acquiring and fitting spectra every 11.7 nm over a 1…

Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating. The frequency and voltage dependent dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties and…

A theory of non-equilibrium (``shot'') noise and high frequency conductance in diffusive mesoscopic conductors with screening is presented. Detailed results are obtained for two simple geometries, for both large and short electron-electron…

In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this…

The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic tunneling junctions were studied at low temperature. The measured 1/f noise around the magnetic hysteresis loops of the free layer indicates that the main origin of…

Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe$_2$ field-effect transistors whose sense of current rectification is controllable through a…

We investigate theoretically the nonequilibrium finite-frequency current noise in a four-terminal quantum point contact of interacting helical edge states at a finite bias voltage. Special focus is put on the effects of the single-particle…