相关论文: Low-Frequency Electronic Noise in the Aluminum Gal…

We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer…

$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…

We use low-temperature scanning electron microscopy combined with SQUID detection of magnetic flux to image vortices and to investigate low-frequency flux noise in YBa$_2$Cu$_3$O$_7$ thin film SQUIDs. The low-frequency flux noise shows a…

We study the photoresponse of graphene field effect transistors using scanning photocurrent microscopy in near and far field configurations, and we find that the response of graphene under a source-drain bias voltage away from the contacts…

We show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of graphene. It was found in a systematic study that some gases change the electrical resistance of graphene devices…

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…

Resistance noise spectroscopy is applied to bulk single crystals of the quasi-two-dimensional organic Mott insulator $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl both under moderate pressure and at ambient-pressure conditions. When pressurized,…

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap…

It is shown, with citing tunnel junction as an example, that mutual interplay of electron quantum transfers in a conducting system can be the fast mechanism for generation fundamental low-frequency flicker conductance fluctuations (1/f…

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case…

AlGaAs/GaAs coatings are being considered as coating candidates for gravitational-wave detectors. In this paper we investigate the birefringence properties of this crystalline semiconductor material by modulating the optical illumination on…

Studies about the constructive aspects of noise and fluctuations in different non-linear systems have shown that the addition of external noise to systems with an intrinsic noise may result in a less noisy response. Recently, the…

An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…

A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron…

We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a…

We have studied low-frequency resistance fluctuations in shadow-evaporated Al/AlOx/Al tunnel junctions. Between 300 K and 5 K the spectral density follows a 1/f-law. Below 5 K, individual defects distort the 1/f-shape of the spectrum. The…

Physical properties of semiconducting CdF_2 crystals doped with In are determined from measurements of the radio-frequency response of a sample with Schottky barriers at frequencies 10 - 10^6 Hz. The dc conductivity, the activation energy…

We study the effect of an AC bias on the low frequency noise, notably $1/f^\gamma$ with $\gamma<2$, of metal-insulator-metal tunnel junctions at room temperature. The measurement is performed in the 6Hz-100kHz frequency range with an AC…

Finite frequency current noise is studied theoretically for a 1D electron system in presence of a scatterer. In contrast to zero frequency shot noise, finite frequency noise shows spatial oscillations at high frequencies with wavelength…

We calculate the low-frequency current noise for AC biased mesoscopic chaotic cavities and diffusive wires. Contrary to what happens for the admittance, the frequency dispersion is not dominated by the electric response time (the "RC" time…