相关论文: Density-Driven Resistance Response in $MnS_{2}$: T…
The exchange interaction of polaronic carriers with localized spins leads to a ferromagnetic/paramagnetic transition in doped charge-transfer insulators with strong electron-phonon coupling. The relative strength of the exchange and…
The presence of free spins in granular Al films is directly demonstrated by $\mu$SR measurements. A Mott transition is observed by probing the increase of the spin-flip scattering rate of conduction electrons as the nano-size metallic…
We present the second-order phase transition from a band insulator to metal that is induced by a strong magnetic field. The magnetic-field dependences of the magnetization and energy band gap of a crystalline silicon immersed in a magnetic…
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…
We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from…
Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…
Electrical resistivity as a function of temperature, pressure, and magnetic field was measured in high and low purity single crystals of BaVS$_3$ close to the critical pressure value $p_{cr}$$\approx$2 GPa, associated with the zero…
Recent experiments with nanopatterned thin films revealed an unusual quantum superconductor to metal phase transition (QSMT) with a linear in temperature resistivity. In contrast, most known examples of such transitions and standard…
We propose a dielectrophoresis model for phase-separated manganites. Without increase of the fraction of metallic phase, an insulator-metal transition occurs when a uniform electric field applied across the system exceeds a threshold value.…
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…
The electrical conductivity and Raman spectroscopy measurements have been performed on MoS$_2$ at high pressures up to 90 GPa and variable temperatures down to 5 K. We find that the temperature dependence of the resistance in a metallic…
We study theoretically the quantum phase transition from a metal to a Wigner-Mott insulator at fractional commensurate filling on a two-leg ladder. We show that a continuous transition out of a symmetry-preserving Luttinger liquid metal is…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…
We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…
The paramagnetic insulator to ferromagnetic metal transition in Lanthanum manganites and the associated magnetoresistive phenomena is treated by considering the localization due to random hopping induced by slowly fluctuating spin…
The origin of the gap in NiS2 as well as the pressure- and doping-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical…
Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has…
We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…