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相关论文: Density-Driven Resistance Response in $MnS_{2}$: T…

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We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where…

强关联电子 · 物理学 2007-05-23 Maryam Rahimi , S. Anissimova , M. R. Sakr , S. V. Kravchenko , T. M. Klapwijk

Static disorder in a noninteracting gas of electrons confined to two dimensions can drive a continuous quantum (Anderson) transition between a metallic and an insulating state when time-reversal symmetry is preserved but spin-rotation…

介观与纳米尺度物理 · 物理学 2008-09-03 Hideaki Obuse , Akira Furusaki , Shinsei Ryu , Christopher Mudry

The trilayer nickelate Nd$_4$Ni$_3$O$_{10-\delta}$ ($\delta \approx$ 0.15) was investigated by the measurements of x-ray diffraction, electrical resistivity, magnetic susceptibility, and heat capacity. The crystal structure data suggest a…

We consider an electronic model for realizing the Spin Bose-metal (SBM) phase on a 2-leg triangular strip --a spin liquid phase found by D. N. Sheng et al [Phys. Rev. B {\bf 79}, 205112 (2009)] in a spin-1/2 model with ring exchanges. The…

强关联电子 · 物理学 2010-06-09 Hsin-Hua Lai , Olexei I. Motrunich

We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic…

强关联电子 · 物理学 2011-09-02 Yejun Feng , R. Jaramillo , A. Banerjee , J. M. Honig , T. F. Rosenbaum

MnSiN$_2$ is a transition metal nitride with Mn and Si ions displaying an ordered distribution on the cation sites of a distorted wurtzite-derived structure. The Mn$^{2+}$ ions reside on a 3D diamond-like covalent network with strong…

We construct an effective Hamiltonian for the motion of electrons among the transition metal ions of ordered double perovskites like Sr2FeMoO6. in which strong intra-atomic Coulomb repulsion U is present in only one of the inequivalent…

强关联电子 · 物理学 2009-11-07 A. A. Aligia , P. Petrone , J. O. Sofo , B. Alascio

The double-exchange model for the Mn oxides with orbital degeneracy is studied with including on-site Coulomb repulsion, Jahn-Teller (J-T) coupling and doping-induced disorder. In the strong interaction limit, it is mapped onto a…

强关联电子 · 物理学 2009-10-31 L. Sheng , D. N. Sheng , C. S. Ting

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…

材料科学 · 物理学 2015-05-14 M. J. Rozenberg , M. J. Sanchez , R. Weht , C. Acha , F. Gomez-Marlasca , P. Levy

Artificially created two-dimensional (2D) interfaces or structures are ideal for seeking exotic phase transitions due to their highly tunable carrier density and interfacially enhanced many-body interactions. Here, we report the discovery…

超导电性 · 物理学 2021-03-16 T. T. Han , L. Chen , C. Cai , Z. G. Wang , Y. D. Wang , Z. M. Xin , Y. Zhang

In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how…

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T-dependence is observed for T < 50 K, which is either metallic, or insulating,…

介观与纳米尺度物理 · 物理学 2010-07-28 L. Zhang , Y. Zhang , M. Khodas , T. Valla , I. A. Zaliznyak

Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive…

The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T)…

强关联电子 · 物理学 2015-05-30 A. T. Satya , Awadhesh Mani , A. Arulraj , N. V. Chandra Shekar , K. Vinod , C. S. Sundar , A. Bharathi

A pressure-induced insulator-to-metal transition (IMT) has recently been discovered in the nodal-line ferrimagnet Mn$_3$Si$_2$Te$_6$. The electronic phase transition is accompanied by anomalies in the magnetic ordering temperature and the…

强关联电子 · 物理学 2026-04-02 Varun Venkatasubramanian , Makoto Shimizu , Daniel Guterding , Harald O. Jeschke

We have performed a detailed high-resolution electron spectroscopic investigation of NiS$_2$ and related Se-substituted compounds NiS$_{2-x}$Se$_x$, which are known to be gapped insulators in the bulk at all temperatures. A large spectral…

We have studied numerically the spectral correlations in a metallic phase and at the metal-insulator transition. We have calculated directly the two-point correlation function of the density of states $R(s,s')$. In the metallic phase, it is…

凝聚态物理 · 物理学 2009-10-28 D. Braun , G. Montambaux

We have studied the insulator-to-metal transition and crystal structure evolution under high pressure in the van der Waals compound CoPS$_3$ through $\textit{in-situ}$ electrical resistance, Hall resistance, magnetoresistance, X-ray…

In spin crossover materials, an abrupt phase transition between a low spin state and a high spin state can be driven by temperature, pressure or by light irradiation. Of a special relevance are Fe(II) based coordination polymers where, in…

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