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Based on a single band Hubbard model and the fluctuation exchange approximation, the effective mass and the energy band renormalization in Na$_{0.33}$CoO$_2$ is elaborated. The renormalization is observed to exhibit certain kind of…

强关联电子 · 物理学 2008-03-16 Zi-Jian Yao , Jian-Xin Li , Z. D. Wang

A quasiparticle band structure of a single layer 2H-NbSe$_2$ is reported by using first-principles $GW$ calculation. We show that a self-energy correction increases the width of a partially occupied band and alters its Fermi surface shape…

介观与纳米尺度物理 · 物理学 2017-10-25 Sejoong Kim , Young-Woo Son

Piezoelectricity appears in the inversion asymmetric crystal that converts mechanical deformational force to electricity. Two-dimensional transition metal dichalcolgenide (TMDC) monolayers exhibit the piezoelectric effect due to the…

应用物理 · 物理学 2019-12-13 Sheng Yu , Quinton Rice , Tikaram Neupane , Bagher Tabibi , Felix Jaetae Seo

Calculating the quasiparticle (QP) band structure of two-dimensional (2D) materials within the GW self-energy approximation has proven to be a rather demanding computational task. The main reason is the strong $\mathbf{q}$-dependence of the…

材料科学 · 物理学 2016-10-12 Filip A. Rasmussen , Per S. Schmidt , Kirsten T. Winther , Kristian S. Thygesen

We present an electrostatic theory of band gap renormalization in atomically-thin semiconductors that captures the strong sensitivity to the surrounding dielectric environment. In particular, our theory aims to correct known band gaps, such…

材料科学 · 物理学 2018-01-24 Yeongsu Cho , Timothy C. Berkelbach

Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely…

The idea of combining different two-dimensional (2D) crystals in van der Waals heterostructures (vdWHs) has led to a new paradigm for band structure engineering with atomic precision. Due to the weak interlayer couplings, the band…

介观与纳米尺度物理 · 物理学 2017-03-10 Kirsten T. Winther , Kristian S. Thygesen

Monolayer molybdenum disulfide ($\mathrm{MoS_2}$) under strain has many interesting properties and possible applications in technology. A recent experimental study examined the effect of strain on the bandgap of monolayer $\mathrm{MoS_2}$…

材料科学 · 物理学 2024-11-18 Raj K. Sah , Hong Tang , Chandra Shahi , Adrienn Ruzsinszky , John P. Perdew

Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$…

The ultrathin nature of two-dimensional monolayer semiconductors yields optoelectronic properties which are highly responsive to changes in free-carrier density, making it imperative to masterfully control their doping levels. We report a…

We theoretically study the electronic and the thermal characteristics of Tantalum, Ta, doped Molybdenum disulfide, MoS$_2$, using density functional theory. It has been shown that the MoS$_2$ monolayer is not a good material for…

介观与纳米尺度物理 · 物理学 2022-04-05 Nzar Rauf Abdullah , Botan Jawdat Abdullah , Hunar Omar Rashid , Chi-Shung Tang , Vidar Gudmundsson

Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon…

Recently, a number of new two-dimensional (2D) materials based on puckered phosphorene and arsenene have been predicted with moderate band gaps, good absorption properties and carrier mobilities superior to transition metal dichalcogenides.…

材料科学 · 物理学 2021-09-10 Magdalena Laurien , Himanshu Saini , Oleg Rubel

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning…

The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the…

介观与纳米尺度物理 · 物理学 2021-04-30 M. Masseroni , T. Davatz , R. Pisoni , F. K. de Vries , P. Rickhaus , T. Taniguchi , K. Watanabe , V. Fal'ko , T. Ihn , K. Ensslin

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and…

材料科学 · 物理学 2015-05-18 Kin Fai Mak , Changgu Lee , James Hone , Jie Shan , Tony F. Heinz

We analyze mass renormalization in massive Dirac-like systems in (2+1) dimensions arising from electron-phonon interactions at finite temperatures, employing the large-$N$ expansion. Our model combines the low-energy description of charge…

强关联电子 · 物理学 2025-06-24 Nilberto Bezerra , Van Sérgio Alves , Leandro O. Nascimento , Luis Fernández

We report many-body perturbation theory calculations of excited-state properties of distorted 1-T diamond-chain monolayer rhenium disulfide (ReS2) and diselenide (ReSe2). Electronic self-energy substantially enhances their quasiparticle…

材料科学 · 物理学 2015-10-28 Hong-Xia Zhong , Shiyuan Gao , Jun-Jie Shi , Li Yang

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is…

We investigate the ground-state properties of monolayer MoS$_2$ incorporating the Coulomb interaction together with a short-range intervalley interaction between charged particles between two valleys within the Hartree-Fock approximation.…

介观与纳米尺度物理 · 物理学 2015-06-03 Habib Rostami , Reza Asgari