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相关论文: Quasiparticle band-gap renormalization in doped mo…

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Doped free carriers can substantially renormalize electronic self-energy and quasiparticle band gaps of two-dimensional (2D) materials. However, it is still challenging to quantitatively calculate this many-electron effect, particularly at…

介观与纳米尺度物理 · 物理学 2017-12-14 Shiyuan Gao , Li Yang

In reduced-dimensional semiconductors, doping-induced carrier plasmons can strongly couple with quasiparticle excitations, leading to a significant band gap renormalization. We develop a new plasmon-pole theory that efficiently and…

介观与纳米尺度物理 · 物理学 2015-02-11 Yufeng Liang , Li Yang

A key feature of monolayer semiconductors, such as transition-metal dichalcogenides, is the poorly screened Coulomb potential, which leads to large exciton binding energy (Eb) and strong renormalization of the quasiparticle bandgap (Eg) by…

强关联电子 · 物理学 2019-06-26 Fang Liu , Mark Ziffer , Kameron R. Hansen , Jue Wang , Xiaoyang Zhu

Recently the renormalization of the band gap $m$, in both WSe$_2$ and MoS$_2$, has been experimentally measured as a function of the carrier concentration $n$. The main result establishes a decreasing of hundreds of meV, in comparison with…

高能物理 - 理论 · 物理学 2020-08-05 Luis Fernández , Van Sérgio Alves , Leandro O. Nascimento , Francisco Peña , M. Gomes , E. C. Marino

Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit…

Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can…

材料科学 · 物理学 2021-03-10 Nourdine Zibouche , Martin Schlipf , Feliciano Giustino

Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena - critical to…

Two Dimensional (2D) Transition Metal Dichalcogenides (TMDs) possess a large direct band gap which has been experimentally observed to shrink with increasing charge carrier density (doping). The effect has been the subject of theoretical…

介观与纳米尺度物理 · 物理学 2025-01-16 Jack N. Engdahl , Harley D. Scammell , Dmitry K. Efimkin , Oleg P. Sushkov

We calculate the quasiparticle properties of $\rm{MoS_2}$ monolayer at $T=0$ considering the dynamical electron-electron interaction effect within random-phase-approximation (RPA). The calculations are carried out for an electron-doped slab…

介观与纳米尺度物理 · 物理学 2020-08-27 Azadeh Faridi , Reza Asgari

The intrinsic weak and highly non-local dielectric screening of two-dimensional materials is well known to lead to high sensitivity of their optoelectronic properties to environment. Less studied theoretically is the role of free carriers…

Dielectric screening plays a crucial role in shaping the electronic structure of two-dimensional (2D) materials. In 2D semiconductors, screened Coulomb interactions arising from the surrounding dielectric environment are known to induce…

强关联电子 · 物理学 2026-05-01 Woojoo Lee , Seungwoo Yoo , Marios Zacharias , Junho Choi , Young-Kyun Kwon

Monolayer MoS$_2$ has emerged as an interesting material for nanoelectronic and optoelectronic devices. The effect of substrate screening and defects on the electronic structure of MoS$_2$ are important considerations in the design of such…

材料科学 · 物理学 2018-09-05 Mit H. Naik , Manish Jain

Optical excitation serves as a powerful approach to control the electronic structure of layered Van der Waals materials via many-body screening effects, induced by photoexcited free carriers, or via light-driven coherence, such as optical…

High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as $MoS_2$ is key to unlocking their unique electronic and optoelectronic properties for fundamental research and device applications. Despite…

Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit novel electrical and optical properties and are emerging as a new platform for exploring 2D semiconductor physics. Reduced screening in 2D results in dramatically enhanced…

Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the…

We investigate how the renormalization of the band gap in a planar 2D material is affected by the consideration of two nondispersive semi-infinite dielectrics, with dielectric constants $\epsilon_1$ and $\epsilon_2$, separated by a planar…

高能物理 - 理论 · 物理学 2023-06-09 Alessandra N. Braga , Wagner P. Pires , Jeferson Danilo L. Silva , Danilo T. Alves , Van Sérgio Alves

The quasiparticle (QP) band structures of both strainless and strained monolayer MoS$_{2}$ are investigated using more accurate many body perturbation \emph{GW} theory and maximally localized Wannier functions (MLWFs) approach. By solving…

材料科学 · 物理学 2013-04-10 Hongliang Shi , Hui Pan , Yong-Wei Zhang , Boris I. Yakobson

Electronic interactions associated with atomic adsorbates on transition metal dichalcogenides such as MoS2 can induce massive electronic reconstruction that results in the formation of a new type of heavily doped transition metal…

Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities…

介观与纳米尺度物理 · 物理学 2018-08-08 D. Erben , A. Steinhoff , G. Schönhoff , T. O. Wehling , C. Gies , F. Jahnke
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