光致带隙重整化主导单层MoS2的超快响应
材料科学
2017-04-24 v1 介观与纳米尺度物理
摘要
过渡金属硫族化合物（TMDs）正成为用于光电子和柔性器件的有前景的二维（2d）半导体。然而，对其光物理的微观解释——对于理解和优化器件操作至关重要——仍然缺乏。本文中，我们利用飞秒瞬态吸收光谱，结合泵浦脉冲可调谐和宽带探测，监测单层MoS2在不同激子跃迁光激发下整个可见范围内的弛豫动力学。我们发现，无论激发光子能量如何，瞬态吸收光谱均显示出所有激子跃迁的同时漂白以及相应的红移光诱导吸收带。对超快光学响应的第一性原理建模揭示，由光激发载流子存在引起的瞬态带隙重整化是观测特征的主要原因。我们的结果证明了即使在低激发密度区间下，多体效应在TMDs瞬态光学响应中的强烈影响。
引用
@article{arxiv.1704.06372,
title = {Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2},
author = {Eva A. A. Pogna and Margherita Marsili and Domenico De Fazio and Stefano Dal Conte and Cristian Manzoni and Davide Sangalli and Duhee Yoon and Antonio Lombardo and Andrea C. Ferrari and Andrea Marini and Giulio Cerullo and Deborah Prezzi},
journal= {arXiv preprint arXiv:1704.06372},
year = {2017}
}
备注
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano after peer review and technical editing by the publisher. To access the final edited and published work see: http://pubs.acs.org/articlesonrequest/AOR-fcCuTYn5m6wiDTIg98Kx