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相关论文: Quasiparticle band-gap renormalization in doped mo…

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We derive the boundary conditions for MoS$_2$ and similar transition-metal dichalcogenide honeycomb (2H polytype) monolayers with the same type of $\mathbf{k}\!\cdot\!\mathbf{p}$ Hamiltonian within the continuum model around the K points.…

介观与纳米尺度物理 · 物理学 2016-01-19 Csaba G. Péterfalvi , Andor Kormányos , Guido Burkard

Layer-dependent electronic and structural properties of emerging graphitic carbon boron compound C3B are investigated using both density functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle…

材料科学 · 物理学 2020-07-29 Yabei Wu , Weiyi Xia , Yubo Zhang , Wenguang Zhu , Wenqing Zhang , Peihong Zhang

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed…

Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…

A recent highlight in the study of high-Tc superconductors is the observation of band renormalization / self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by…

We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and…

We calculate the electronic structure for a modulation doped and gated T-shaped quantum wire using density functional theory. We calculate the bandgap renormalization as a function of the density of conduction band electrons, induced by the…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Stopa

The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current…

High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…

强关联电子 · 物理学 2016-07-05 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

In search of an improved strategy to form low resistance contacts to MoS2 and related semiconducting transition metal dichalcogenides, we use ab initio density functional electronic structure calculations in order to determine the…

介观与纳米尺度物理 · 物理学 2019-05-03 Zhibin Gao , Zhixian Zhou , David Tomanek

We present a systematic study of the variables affecting the electronic and optical properties of two-dimensional(2D) crystals within \textit{ab initio} GW and GW plus Bethe Salpeter Equation (GW-BSE) calculations. As a prototypical 2D…

材料科学 · 物理学 2016-07-20 Diana Y. Qiu , Felipe H. da Jornada , Steven G. Louie

With help of ab initio density functional theory calculation, DFT+U, and hybrid functional HSE06, we revisit the layer dependent electronic structure and magnetic properties of pristine and 3d transition metal Cr doped MoS$_2$ monolayer and…

材料科学 · 物理学 2024-03-25 Aloka Ranjan Sahoo , Sharat Chandra

In optically excited two-dimensional phototransistors, charge transport is often affected by photodoping effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that…

应用物理 · 物理学 2019-03-06 Jorge Quereda , Talieh S. Ghiasi , Caspar H. van der Wal , Bart J. van Wees

Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure.…

介观与纳米尺度物理 · 物理学 2016-06-10 Amithraj Valsaraj , Jiwon Chang , Amritesh Rai , Leonard F. Register , Sanjay K. Banerjee

We present numerical calculations of the impact of charge carriers-carriers interactions on the dynamical properties of quasiparticles such as renormalized velocity and quasiparticle inelastic scattering lifetime in a gapped graphene sheet.…

介观与纳米尺度物理 · 物理学 2010-04-22 A. Qaiumzadeh , F. K. Joibari , Reza Asgari

Twisted bilayer transition metal dichalcogenides are ideal platforms to study flat-band phenomena. In this paper, we investigate flat-band plasmons in the hole-doped twisted bilayer MoS$_2$ (tb-MoS$_2$) by employing a full tight-binding…

介观与纳米尺度物理 · 物理学 2022-07-13 Xueheng Kuang , Zhen Zhan , Shengjun Yuan

Bulk MoS2, a prototypical layered transition-metal dichalcogenide, is an indirect band gap semiconductor. Reducing its size to a monolayer, MoS2 undergoes a transition to the direct band semiconductor. We support this experimental…

材料科学 · 物理学 2015-03-19 Agnieszka Kuc , Nourdine Zibouche , Thomas Heine

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding…

介观与纳米尺度物理 · 物理学 2017-08-02 Eric Parzinger , Martin Hetzl , Ursula Wurstbauer , Alexander W. Holleitner

We performed high-throughput density functional theory calculations of optical matrix elements between band edges across a diverse set of non-magnetic two-dimensional monolayers with direct band gaps. Materials were ranked as potential…

材料科学 · 物理学 2025-08-15 A. F. Gómez-Bastidas , Karthik Sriram , A. C. Garcia-Castro , Oleg Rubel

Wrinkles and nanobubbles are an integral and often unavoidable part of integrating 2D van der Waals semiconductors into actual device architectures. Despite their ubiquitous nature, quantitative correlation between such spatially…

材料科学 · 物理学 2026-04-01 Soumyadip Hazra , Sraboni Dey , Arijit Kayal , Narendra Shah , Renjith Nadarajan , Joy Mitra