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Transition metal dichalcogenide monolayers provide an emerging material system to implement quantum photonics with intrinsic two-dimensional excitons or embedded zero-dimensional localized states. Here we demonstrate the mesoscopic…

In light of the rise of transition metal dichalcogenides as 2D semiconductors for device applications, band engineering becomes very important from an application point of view. In many of these materials, such as the canonical example of…

材料科学 · 物理学 2026-05-14 Maciej Bazarnik , Thorsten Deilmann , Marta Przychodnia , Anika Schlenhoff

We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that…

We investigate the resonant optical response of single material-anisotropic nanoparticles (NPs) of molybdenum disulfide (MoS$_2$) and their two-dimensional arrays (metasurfaces) irradiated by plane waves of the telecomunication optical…

We show that spin-orbit splitting (SOS) in monolayers of semiconducting transition metal dichalcogenides (TMDs) is substantially enhanced by electron-electron interaction. This effect, similar to the exchange-enhancement of the electron…

介观与纳米尺度物理 · 物理学 2024-10-18 Igor Rozhansky , Vladimir Fal'ko

The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a…

Interfaces formed between monolayer transition metal dichalcogenides (TMDs) and (metallo)phthalocyanine molecules are promising in energy applications and provide a platform for studying mixed-dimensional molecule-semiconductor…

材料科学 · 物理学 2021-12-13 Olugbenga Adeniran , Zhen-Fei Liu

Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is…

材料科学 · 物理学 2021-05-12 Kaoru Hisama , Mina Maruyama , Shohei Chiashi , Shigeo Maruyama , Susumu Okada

Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by…

介观与纳米尺度物理 · 物理学 2014-09-16 A. Carvalho , A. H. Castro Neto

Optical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We have, however, observed a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS2),…

介观与纳米尺度物理 · 物理学 2014-10-22 C. H. Lui , A. J. Frenzel , D. V. Pilon , Y. -H. Lee , X. Ling , G. M. Akselrod , J. Kong , N. Gedik

We performed a first-principles study of the electronic behavior of a 2D hexagonal boron phosphide monolayer (2D-h-BP). The system was deformed isotropically by applying a simultaneous tensile strain along the a and b crystal axes. We…

We describe both the Fermi velocity and the mass renormalization due to the two-dimensional Coulomb interaction in the presence of a thermal bath. To achieve this, we consider an anisotropic version of pseudo quantum electrodynamics (PQED),…

介观与纳米尺度物理 · 物理学 2023-09-19 Nilberto Bezerra , Van Sérgio Alves , Leandro O. Nascimento , Luis Fernandez

When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. Research on transition metal dichalcogenide (TMD)…

Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…

应用物理 · 物理学 2019-10-02 Nan Fang , Kosuke Nagashio

Pseudogap in hole-doped cuprate superconductors is acknowledged as a possible key to understanding their ground normal state, however, existing pseudogap models have essential inconsistencies with experiments. In our approach pseudogap…

超导电性 · 物理学 2021-06-18 S. V. Doronkina , A. E. Myasnikova , A. H. Dzhantemirov , A. V. Lutsenko

The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric effect was also observed in odd-layered MoS2 with broken…

介观与纳米尺度物理 · 物理学 2015-07-22 Sajedeh Manzeli , Adrien Allain , Amirhossein Ghadimi , Andras Kis

We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…

材料科学 · 物理学 2009-11-10 F. Capotondi , G. Biasiol , I. Vobornik , L. Sorba , F. Giazotto , A. Cavallini , B. Fraboni

Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of…

Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically…

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction…