相关论文: Input referred low-frequency noise analysis for si…

Silicon-photonic neural networks (SPNNs) have emerged as promising successors to electronic artificial intelligence (AI) accelerators by offering orders of magnitude lower latency and higher energy efficiency. Nevertheless, the underlying…

We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an…

Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device applications. In this work, we demonstrate that graphene, when…

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…

A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise…

Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is…

The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions…

We study a superconducting transmission line (TL) formed by distributed LC oscillators and excited by external magnetic fluxes which are aroused from random magnetization (A) placed in substrate or (B) distributed at interfaces of a…

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…

A Low-Power Variable Gain (VG) mm-Wave Low Noise Amplifier (LNA) is designed and simulated in a 28-nm CMOS process. The LNA utilizes a simple, yet novel, technique presented in this paper to vary the small-signal output resistance to…

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…

The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely…

This report is aimed at reviving the explanation of flicker-noise observations as the result of spectral measurement of very low-frequency but stationary narrow-band fluctuations named as infralow-frequency noise (ILF noise) [A. Ya.…

We investigated low-frequency current fluctuations, i.e. noise, in the quasi-two-dimensional (2D) van der Waals antiferromagnetic semiconductor FePS3 with the electronic bandgap of 1.5 eV. The electrical and noise characteristics of the…

Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a…

We report on the low frequency noise in the ballistic point-contacts between a silver tip and a niobium foil. The ballistic nature of the point-contacts is confirmed by Andreev reflection spectroscopy at low bias voltage with the Nb foil…

We calculate low-frequency noise (LFN) in a quantum point contact (QPC) which is electrostatically defined in a 2D electron gas of a GaAs-AlGaAs heterostructure. The conventional source of LFN in such systems are scattering potentials…

We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…