相关论文: Input referred low-frequency noise analysis for si…
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…
The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of monolayer…
Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their…
We propose an SU(4) spin-valley-fermion model to investigate the superconducting instabilities of twisted bilayer graphene (TBG). In this approach, bosonic fluctuations associated with an emergent SU(4) symmetry, corresponding to combined…
We have investigated the statistics of low frequency noise in the tunneling current of ultrathin oxides (2.5nm-4nm) in metal oxide semiconductor capacitors as a function of the applied voltage stress. The statistical analysis includes (i)…
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field…
While preserving many of the unusual features of single-layer graphene, few-layer graphene (FLG) provides a richness and flexibility of electronic structure that render this set of materials of great interest for both fundamental studies…
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS)…
We report measurements and analysis of the voltage noise due the to vortex motion, performed in superconducting Niobium micro-bridges. Noise in such small systems exhibits important changes from the behavior commonly reported in macroscopic…
An approach to the problem of 1/f voltage noise observed in all conducting media is developed based on an uncertainty relation for the Fourier-transformed signal. It is shown that the quantum indeterminacy caused by non-commutativity of…
Unwanted fluctuations over time, in short, noise, are detrimental to device performance, especially for quantum coherent circuits. Recent efforts have demonstrated routes to utilizing magnon systems for quantum technologies, which are based…
The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2 - 1 eV. Distinct optical conductivity spectra were…
Stability of graph neural networks (GNNs) characterizes how GNNs react to graph perturbations and provides guarantees for architecture performance in noisy scenarios. This paper develops a self-regularized graph neural network (SR-GNN)…
Superconductivity in graphene has been highly sought after for its promise in various device applications and for general scientific interest. Ironically, the simple electronic structure of graphene, which is responsible for novel quantum…
Recent progress in diffusion-based visual generation has largely relied on latent diffusion models with variational autoencoders (VAEs). While effective for high-fidelity synthesis, this VAE+diffusion paradigm suffers from limited training…
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…
We study the flux noise $S_{\Phi}(\omega)$ and finite frequency conductivity $\sigma_1(\omega)$ in two dimensional unfrustrated Josephson junction arrays (JJA's), by numerically solving the equations of the coupled overdamped…
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic…
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and…
Through-silicon vias (TSVs) enable dense vertical interconnects in 3D-IC and chiplet systems, but their metal-oxide-silicon structure introduces significant parasitic coupling paths that can degrade the spectral purity of sensitive RF…