A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

N. Clement; K. Nishiguchi; J. F. Dufreche; D. Guerin; A. Fujiwara; D. Vuillaume

doi:10.1063/1.3535958

A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

Mesoscale and Nanoscale Physics 2011-01-24 v2

Authors: N. Clement , K. Nishiguchi , J. F. Dufreche , D. Guerin , A. Fujiwara , D. Vuillaume

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Abstract

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq = 1.6x10-2 e/sqr(Hz) at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.

Keywords

noise field-effect transistors nanowire physics

Cite

@article{arxiv.1010.1232,
  title  = {A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity},
  author = {N. Clement and K. Nishiguchi and J. F. Dufreche and D. Guerin and A. Fujiwara and D. Vuillaume},
  journal= {arXiv preprint arXiv:1010.1232},
  year   = {2011}
}

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One file including paper (with 3 figures) and supplementary information (with 5 figures). Submitted

A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

Abstract

Keywords

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