Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as ~2000uA/um. We estimated carrier mobility ~200cm2/Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d<=~1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.
@article{arxiv.0803.3464,
title = {Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors},
author = {Xinran Wang and Yijian Ouyang and Xiaolin Li and Hailiang Wang and Jing Guo and Hongjie Dai},
journal= {arXiv preprint arXiv:0803.3464},
year = {2009}
}