Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs.
@article{arxiv.1605.06730,
title = {Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons},
author = {Juan Pablo Llinas and Andrew Fairbrother and Gabriela Borin Barin and Wu Shi and Kyunghoon Lee and Shuang Wu and Byung Yong Choi and Rohit Braganza and Jordan Lear and Nicholas Kau and Wonwoo Choi and Chen Chen and Zahra Pedramrazi and Tim Dumslaff and Akimitsu Narita and Xinliang Feng and Klaus Müllen and Felix Fischer and Alex Zettl and Pascal Ruffieux and Eli Yablonovitch and Michael Crommie and Roman Fasel and Jeffrey Bokor},
journal= {arXiv preprint arXiv:1605.06730},
year = {2017}
}