We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.
@article{arxiv.1112.4999,
title = {Field-effect tunneling transistor based on vertical graphene heterostructures},
author = {L. Britnell and R. V. Gorbachev and R. Jalil and B. D. Belle and F. Schedin and M. I. Katsnelson and L. Eaves and S. V. Morozov and N. M. R. Peres and J. Leist and A. K. Geim and K. S. Novoselov and L. A. Ponomarenko},
journal= {arXiv preprint arXiv:1112.4999},
year = {2012}
}