Reversible modifications of linear dispersion - graphene between boron nitride monolayers
Materials Science
2010-11-10 v2
Abstract
Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure in the absence of external field the bands are linear in the vicinity of the Dirac points as in the case of single-layer graphene. For certain atomic configuration, the electric field effect allows opening of a band gap of over 230 meV. We believe that this mechanism of energy gap tuning could significantly improve the characteristics of graphene-based field-effect transistors and pave the way for future electronic applications.
Cite
@article{arxiv.1007.3238,
title = {Reversible modifications of linear dispersion - graphene between boron nitride monolayers},
author = {J. Slawinska and I. Zasada and P. Kosinski and Z. Klusek},
journal= {arXiv preprint arXiv:1007.3238},
year = {2010}
}
Comments
5 pages, v2 with slightly modified introduction and summary