The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, θhBN≲2∘, the graphene electronic structure is strongly disturbed. The width of the low energy peak in the density of states changes from W∼5−10 meV for a decoupled system to ∼20−30 meV. Spikes in the density of states due to van Hove singularities are smoothed out. We find that for a realistic combination of the twist angle in the TBG and the twist angle between the hBN and the graphene layer the system can be described using a single moir\'e unit cell.
@article{arxiv.2005.07396,
title = {Band structure of twisted bilayer graphene on hexagonal boron nitride},
author = {Tommaso Cea and Pierre A. Pantaleon and Francisco Guinea},
journal= {arXiv preprint arXiv:2005.07396},
year = {2020}
}