In this article, we report the electronic band structures of hexagonal bilayer systems, specifically, rotated graphene-graphene and boron nitride-boron nitride bilayers, by introducing an angle between the layers and forming new periodic structures, known as moir\'e patterns. Using a semi-empirical tight-binding approach with a parametrized hopping parameter between the layers, using one orbital per-site approximation, and taking into account nearest-neighbor interactions only, we found he electronic dispersion relations to be around K points in a low energy approximation. Our results show that graphene bilayers exhibit zero band gap for all angles tested in this work. In boron nitride bilayers, the results reveal a tunable bandgap that satisfies the prediction of the bandgap found in one-dimensional diatomic systems presented in the literature.
@article{arxiv.2103.15529,
title = {Electronic properties of bilayer sheets forming moir\'e patterns},
author = {W. S. Wu-Mei and R. R. Rey-González},
journal= {arXiv preprint arXiv:2103.15529},
year = {2024}
}