The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. The simulation results indicate multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidate for high performance GNR FETs.
@article{arxiv.0912.2140,
title = {Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material},
author = {Yijian Ouyang and Hongjie Dai and Jing Guo},
journal= {arXiv preprint arXiv:0912.2140},
year = {2009}
}