Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm<W<52nm) is about 3X that of a Cu wire, whereas the best GNR has a resistivity comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as LER scattering; as a result, the best reported GNR resistivity is 3X the limit imposed by substrate phonon scattering. This study reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.
@article{arxiv.0906.0924,
title = {Resistivity of Graphene Nanoribbon Interconnects},
author = {Raghunath Murali and Kevin Brenner and Yinxiao Yang and Thomas Beck and James D. Meindl},
journal= {arXiv preprint arXiv:0906.0924},
year = {2015}
}
Comments
10 pages, 3 figures, to be published in IEEE Electron Device Letters