We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and acoustic phonon scattering. The obtained results are important for the proposed applications of graphene as interconnects in integrated circuits.
@article{arxiv.0805.0334,
title = {Resistance Quenching in Graphene Interconnects},
author = {Q. Shao and G. Liu and D. Teweldebrhan and A. A. Balandin},
journal= {arXiv preprint arXiv:0805.0334},
year = {2008}
}