Phonon Scattering at Kinks in Suspended Graphene
Abstract
Recent experiments have shown surprisingly large thermal time constants in suspended graphene ranging from 10 to 100 ns in drums with a diameter ranging from 2 to 7 microns. The large time constants and their scaling with diameter points towards a thermal resistance at the edge of the drum. However, an explanation of the microscopic origin of this resistance is lacking. Here, we show how phonon scattering at a kink in the graphene, e.g. formed by sidewall adhesion at the edge of the suspended membrane, can cause a large thermal time constant. This kink strongly limits the fraction of flexural phonons that cross the suspended graphene edge, which causes a thermal interface resistance at its boundary. Our model predicts thermal time constants that are of the same order of magnitude as experimental data, and shows a similar dependence on the circumference. Furthermore, the model predicts the relative in-plane and out-of-plane phonon contributions to graphene's thermal expansion force, in agreement with experiments. We thus show, that in contrast to conventional thermal (Kapitza) resistance which occurs between two different materials, in 2D materials another type of thermal interface resistance can be geometrically induced in a single material.
Cite
@article{arxiv.1909.11615,
title = {Phonon Scattering at Kinks in Suspended Graphene},
author = {Robin J. Dolleman and Yaroslav M. Blanter and Herre S. J. van der Zant and Peter G. Steeneken and Gerard J. Verbiest},
journal= {arXiv preprint arXiv:1909.11615},
year = {2020}
}