We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature (T) and carrier density (n). We find a temperature dependent phonon-limited resistivity ρph(T) to be linear in temperature for T\agt50K with the room temperature intrinsic mobility reaching values above 105 cm2/Vs. We comment on the low-temperature Bloch-Gr\"{u}neisen behavior where ρph(T)∼T4 for unscreened electron-phonon coupling.
@article{arxiv.0711.0754,
title = {Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene},
author = {E. H. Hwang and S. Das Sarma},
journal= {arXiv preprint arXiv:0711.0754},
year = {2008}
}